onsemi and Innoscience have signed a memorandum of understanding to work together on accelerating the deployment of GaN power devices, starting with 40-200V. This collaboration combines onsemi’s expertise in integrated systems and packaging with Innoscience’s GaN technology to deliver cost-effective, efficient GaN products for various markets, including industrial, automotive, and AI data centers. GaN devices offer higher speeds, smaller sizes, and lower energy losses, making them ideal for power applications. The partnership aims to address cost and supply constraints that have limited GaN adoption in the low and medium-voltage segments.

The global power semiconductor market is projected to reach $2.9 billion, with GaN expected to capture an 11% share by 2030. This growth is driven by the increasing demand for efficient power systems and the need to reduce CO2 emissions. Both onsemi and Innoscience are excited about the potential of GaN technology to revolutionize the electronics industry and are committed to expanding its adoption worldwide through their collaboration.

Read more at Nasdaq, Inc.: Onsemi And Innoscience Plans To Collaborate To Speed Global Rollout Of GaN Power Devices