Navitas Semiconductor unveiled a 10 kW DC-DC power platform boasting up to 98.5% efficiency and 1 MHz switching frequency, ideal for AI data centers. The platform features GaNFast FETs and achieves 98.1% full load efficiency in a compact package, delivering 2.1 kW/in³ power density.

This innovative platform supports 800 V–to–50 V and + / – 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control for next-gen HVDC AI data centers. Navitas aims to redefine data center power with increased efficiency, density, and scalability to meet the demands of AI workloads.

The 10 kW DC-DC platform is currently being evaluated by key data center customers through collaborative development and will debut at the Navitas booth (#2027) at APEC in March. For more information, reach out to Navitas representatives via email at [email protected].

Navitas Semiconductor is a leader in GaN and SiC technology, driving innovation across various sectors. The company’s GaNFast power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency.

Navitas is dedicated to providing industry-leading voltage capability, efficiency, and reliability through its GeneSiC high-voltage SiC devices. With over 300 patents issued or pending, Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.

Read more at GlobeNewswire: Navitas Unveils Breakthrough 10 kW DC-DC Platform